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june 2009 doc id 13302 rev 3 1/14 14 stp200n4f3 STB200N4F3 n-channel 40 v, 0.0025 ? , 120 a, d 2 pak, to-220 planar stripfet? power mosfet features 100 % avalanche tested standard threshold drive application switching applications automotive description this stripfet? iii power mosfet technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. figure 1. internal schematic diagram type v dss r ds(on) max i d p w STB200N4F3 40 v <0.0031 ? 120 a 300 w stp200n4f3 40 v <0.0035 ? 120 a 300 w 1 3 d2pak 1 2 3 to-220 table 1. device summary order code marking package packaging STB200N4F3 200n4f3 d2pak tape and reel stp200n4f3 200n4f3 to-220 tube www.st.com
contents STB200N4F3, stp200n4f3 2/14 doc id 13302 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB200N4F3, stp200n4f3 electrical ratings doc id 13302 rev 3 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25 c 120 a i d (1) drain current (continuous) at t c = 100 c 120 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 480 a p tot total dissipation at t c = 25 c 300 w derating factor 2.0 w/c e as (3) 3. starting tj = 25c, i d = 60a, v dd = 25v single pulse avalanche energy 862 mj dv/dt (4) 4. i sd 60a, di/dt 440 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4.2 v/ns t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit to-220 d2pak r thjc thermal resistance junction-case max 0.50 c/w r thj-pcb (1) 1. when mounted on fr-4 board, 1inch2 2 oz. cu. thermal resistance junction-pcb max 35 c/w r thja thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STB200N4F3, stp200n4f3 4/14 doc id 13302 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 60 a d2pak to-220 0.0025 0.0030 0.0031 0.0035 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 10 v, i d = 80 a - 200 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 5100 1270 37 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 120 a v gs = 10 v (see figure 14) - 75 23 17 - nc nc nc
STB200N4F3, stp200n4f3 electrical characteristics doc id 13302 rev 3 5/14 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 60 a, r g = 4.7 ?, v gs = 10 v (see figure 13) - 19 180 - ns ns t d(off) t f off-voltage rise time fall time v dd = 20 v, i d = 60 a, r g = 4.7 ?, v gs = 10 v (see figure 13) - 90 65 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 120 480 a a v sd forward on voltage i sd = 120 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, di/dt = 100 a/s, v dd = 20 v, t j = 150 c (see figure 18) - 67 130 4 ns nc a
electrical characteristics STB200N4F3, stp200n4f3 6/14 doc id 13302 rev 3 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs. temperature figure 7. static drain-source on resistance
STB200N4F3, stp200n4f3 electrical characteristics doc id 13302 rev 3 7/14 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on resistance vs. temperature figure 12. source-drain diode forward characteristics
test circuits STB200N4F3, stp200n4f3 8/14 doc id 13302 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform
STB200N4F3, stp200n4f3 package mechanical data doc id 13302 rev 3 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STB200N4F3, stp200n4f3 10/14 doc id 13302 rev 3 d2pak (to-263) mechanical data dim h c n i m m min typ max min typ max 1 8 1 . 0 3 7 1 . 0 0 6 . 4 0 4 . 4 a 9 0 0 . 0 1 0 0 . 0 3 2 . 0 3 0 . 0 1 a 7 3 0 . 0 7 2 0 . 0 3 9 . 0 0 7 . 0 b 7 6 0 . 0 5 4 0 . 0 0 7 . 1 4 1 . 1 2 b 4 2 0 . 0 7 1 0 . 0 0 6 . 0 5 4 . 0 c 3 5 0 . 0 8 4 0 . 0 6 3 . 1 3 2 . 1 2 c 8 6 3 . 0 2 5 3 . 0 5 3 . 9 5 9 . 8 d 5 9 2 . 0 0 5 . 7 1 d 9 0 4 . 0 4 9 3 . 0 0 4 . 0 1 0 1 e 4 3 3 . 0 0 5 . 8 1 e 1 . 0 4 5 . 2 e 8 0 2 . 0 2 9 1 . 0 8 2 . 5 8 8 . 4 1 e 4 2 6 . 0 0 9 5 . 0 5 8 . 5 1 5 1 h 6 0 1 . 0 9 9 0 . 0 9 6 . 2 9 4 . 2 1 j 0 1 1 . 0 0 9 0 . 0 9 7 . 2 9 2 . 2 l 5 5 0 . 0 5 0 . 0 0 4 . 1 7 2 . 1 1 l 9 6 0 . 0 1 5 0 . 0 5 7 . 1 0 3 . 1 2 l 6 1 0 . 0 4 . 0 r 8 0 8 0 2 v 0079457_m
STB200N4F3, stp200n4f3 package mechanical data doc id 13302 rev 3 11/14 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
packaging mechanical data STB200N4F3, stp200n4f3 12/14 doc id 13302 rev 3 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
STB200N4F3, stp200n4f3 revision history doc id 13302 rev 3 13/14 6 revision history table 8. document revision history date revision changes 02-mar-2007 1 first release 02-oct-2007 2 added to-220 package 23-jun-2009 3 updated r ds(on) limits in table 4 and figure 7
STB200N4F3, stp200n4f3 14/14 doc id 13302 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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